首页> 外文OA文献 >The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices

【2h】

The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices

机译：高k复合材料与si的介电常数和导带相对水平在提高电荷俘获存储器件存储性能中的作用

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Jianxin Lu; Changjie Gong; Xin Ou; Wei Lu; Jiang Yin; Bo Xu; Yidong Xia; Zhiguo Liu; Aidong Li;
展开▼
作者单位

展开▼
年度 2014
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices [J] . Jianxin Lu, Changjie Gong, Xin Ou, AIP Advances . 2014,第11期

机译：硅的高k复合材料的介电常数和导带的相对能级在改善电荷陷阱存储器件的存储性能中的作用
2. Band-alignment dominated retention behaviors in high-k composite charge-trapping memory devices [J] . Ding Ping, Yang Youbin, Wang Yiru, Applied Physics Letters . 2019,第5期

机译：高k复合电荷陷阱存储器件中的能带排列占主导的保留行为
3. High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta2O5 as a controlled gate dielectric [J] . Min-Kun Dai, Tai-Yuan Lin, Min-Hua Yang Journal of Materials Chemistry, C. materials for optical and electronic devices . 2014,第27期

机译：基于石墨纳米晶体作为电荷俘获元素和高k Ta2O5作为受控栅介质的高性能有机纳米浮栅存储器件
4. Improved Operation Characteristics in Charge-Trapping Flash Memory Devices with Engineered Dielectric Stack and SiGe Channel [C] . Zong-Hao Ye, Li-Jung Liu, Kuei-Shu Chang-Liao Symposium on nonvolatile memories;Meeting of the Electrochemical Society . 2013

机译：具有工程介电堆栈和SiGe通道的电荷陷阱闪存设备的改进的操作特性
5. Atomic Layer Deposition of Platinum Nano-particles and High-k Dielectrics for Non-volatile Charge Storage Memory Devices. [D] . Novak, Steven Randall. 2010

机译：用于非易失性电荷存储存储设备的铂纳米粒子和高k电介质的原子层沉积。
6. Ta2O5-TiO2 Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory [O] . C. Y. Wei, B. Shen, P. Ding, -1

机译：Ta2O5-TiO2复合电荷俘获电介质在非易失性存储器中的应用
7. Effects of forming gas annealing on the memory characteristics of Ge nanocrystals embedded in LaAlO3 high-k dielectrics for flash memory device application [O] . Lu XB, Lee PF, Dai JY 2006

机译：形成气体退火对嵌入LaAlO3高k电介质中的Ge纳米晶体存储特性的影响

The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices

著录项

引文网络

相似文献

相关主题

期刊订阅